| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium oxide substrate that can realize high cleanness and flatness of substrate surface while preventing deterioration of substrate surface roughness by suppressing reaction between the gallium oxide and hydrogen, and to provide the gallium oxide substrate.SOLUTION: A (GaAl)Ofilm 4 is formed on gallium oxide substrate surface 3 using sol-gel method. A gallium oxide substrate 1 is a single crystal substrate, and x of the (GaAl)Ofilm 4 is 0.05 or more and 0.8 or less, and more preferably 0.05 or more and 0.7 or less. By forming such (GaAl)Ofilm 4 on the surface of the gallium oxide substrate 1, Ra, the surface roughness of the (GaAl)Ofilm 4, may be kept 10 nm or less even if the surface of the (GaAl)Ofilm 4 is etched by hydrogen in the atmosphere while the gallium oxide substrate 1 is thermally cleaned. |
