发明名称 |
THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE INCLUDING THE SAME |
摘要 |
Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed. |
申请公布号 |
US2014048795(A1) |
申请公布日期 |
2014.02.20 |
申请号 |
US201213690470 |
申请日期 |
2012.11.30 |
申请人 |
COOPERATION FOUNDATION OF KYUNGHEE UNIVERSITY INDUSTRY ACADEMY;SAMSUNG DISPLAY CO., LTD.;INDUSTRY ACADEMY COOPERATION FOUNDATION OF KYUNGHEE UNIVERSITY |
发明人 |
KIM TAE-WOONG;JANG JIN;AVIS CHRISTOPHE VINCENT;KIM YOUN-GOO |
分类号 |
H01L29/24 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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