发明名称 Memory Cells and Methods of Forming Memory Cells
摘要 Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.
申请公布号 US2014051208(A1) 申请公布日期 2014.02.20
申请号 US201314053847 申请日期 2013.10.15
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.;SRINIVASAN BHASKAR
分类号 H01L45/00 主分类号 H01L45/00
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