MEMORY MODULE, AND MEMORY SYSTEM INCLUDING THE SAME

摘要

A memory module according to the present invention comprises a plurality of semiconductor memory devices. Each of the semiconductor memory devices includes: a memory cell array including a plurality of memory cells disposed in an area in which a plurality of bit lines and a plurality of word lines cross each other; and a data input/output circuit configured to receive data input from the outside, output the received data to the memory cell array, receive data read from the memory cell array, and output the read data to the outside, wherein the data input from the outside includes data information corresponding to the data, and the data input/output circuit outputs data corresponding to predetermined bit values in the order of a plurality of input/output lines, based on the bit values included in the data information. [Reference numerals] (110) Memory cell array; (120) Row decoder; (130) Sense amplifier; (140) Column decoder; (150) Refresh control circuit; (160) Command decoder; (180) Address buffer; (190) Data input/output circuit