| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD-SiC compact which has low light permeability and high electrical resistivity and can be favorably used for an etcher member and so on used in a semiconductor manufacturing process.SOLUTION: An SiC compact, formed by the CVD method, includes boron atoms by 1-30 mass ppm, and nitrogen atoms by more than 100 mass ppm and equal to or less than 1000 mass ppm. Preferably, electrical resistivity is more than 10 &OHgr; cm and equal to or less than 100000 &OHgr; cm, and light permeability is 0-1% at a wavelength of 950 nm. |
