发明名称 RESISTNACE VARIABLE MEMORY DEVICE AND MEMORY SYSTEM PERFORMING FLEXIBLE PROGRAM METHOD
摘要 In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.
申请公布号 KR101365683(B1) 申请公布日期 2014.02.20
申请号 KR20070138978 申请日期 2007.12.27
申请人 发明人
分类号 G11C16/10;G11C16/34 主分类号 G11C16/10
代理机构 代理人
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