发明名称 |
METHOD TO GENERATE RANDOM NUMBER USING PHYSICAL CHARACTERISTIC OF NONVOLATILE MEMORY CELL |
摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory system capable of generating a random number without another random number generator and a random number generation method of the same.SOLUTION: A random number generation method of a storage device includes the steps of: selecting one or more word lines; programming a page corresponding to the selected word line in the same data; providing random number readout voltage to the selected word line and reading the selected page; obtaining a random number from the readout data of the selected page. The storage device may be a flash memory. The present invention generates a random number using a characteristic of threshold voltage distribution of a flash memory cell. Since the present invention generates a random number using physical characteristic of the flash memory, it does not require another random number generator. |
申请公布号 |
JP2014032655(A) |
申请公布日期 |
2014.02.20 |
申请号 |
JP20130119560 |
申请日期 |
2013.06.06 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SEOL CHANGKYU;GONG JUN-TIN;SON HONG-RAK;YOON PIL-SANG |
分类号 |
G06F7/58;G11C16/02;G11C16/04;G11C16/06 |
主分类号 |
G06F7/58 |
代理机构 |
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