发明名称 METHOD TO GENERATE RANDOM NUMBER USING PHYSICAL CHARACTERISTIC OF NONVOLATILE MEMORY CELL
摘要 PROBLEM TO BE SOLVED: To provide a flash memory system capable of generating a random number without another random number generator and a random number generation method of the same.SOLUTION: A random number generation method of a storage device includes the steps of: selecting one or more word lines; programming a page corresponding to the selected word line in the same data; providing random number readout voltage to the selected word line and reading the selected page; obtaining a random number from the readout data of the selected page. The storage device may be a flash memory. The present invention generates a random number using a characteristic of threshold voltage distribution of a flash memory cell. Since the present invention generates a random number using physical characteristic of the flash memory, it does not require another random number generator.
申请公布号 JP2014032655(A) 申请公布日期 2014.02.20
申请号 JP20130119560 申请日期 2013.06.06
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SEOL CHANGKYU;GONG JUN-TIN;SON HONG-RAK;YOON PIL-SANG
分类号 G06F7/58;G11C16/02;G11C16/04;G11C16/06 主分类号 G06F7/58
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