| 发明名称 |
ETCH WITH MIXED MODE PULSING |
| 摘要 |
A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer. |
| 申请公布号 |
US2014051256(A1) |
申请公布日期 |
2014.02.20 |
| 申请号 |
US201213586793 |
申请日期 |
2012.08.15 |
| 申请人 |
ZHONG QINGHUA;LI SIYI;KIRAKOSIAN ARMEN;ZHOU YIFENG;VINNAKOTA RAMKUMAR;KUO MING-SHU;RAGHAVAN SRIKANTH;KIMURA YOSHIE;KIM TAE WON;KAMARTHY GOWRI;LAM RESEARCH CORPORATION |
发明人 |
ZHONG QINGHUA;LI SIYI;KIRAKOSIAN ARMEN;ZHOU YIFENG;VINNAKOTA RAMKUMAR;KUO MING-SHU;RAGHAVAN SRIKANTH;KIMURA YOSHIE;KIM TAE WON;KAMARTHY GOWRI |
| 分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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