SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure in which parasitic capacitance between wirings can be sufficiently reduced.SOLUTION: In a thin film transistor having a bottom gate structure which uses an oxide semiconductor layer, an oxide insulating layer is formed so as to serve as a channel protection layer in contact on a part of the oxide semiconductor layer overlapping with a gate electrode layer, and an oxide insulating layer is formed so as to cover a peripheral portion (including a side surface) of the stacked oxide semiconductor layer when forming the oxide insulating layer. A source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protecting layer. A structure is provided so that an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer.