发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.
申请公布号 US2014051261(A1) 申请公布日期 2014.02.20
申请号 US201214006819 申请日期 2012.03.07
申请人 OTA YOSUKE;HIROSE YOSHIRO;HITACHI KOKUSAI ELECTRIC INC. 发明人 OTA YOSUKE;HIROSE YOSHIRO
分类号 H01L21/02 主分类号 H01L21/02
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