| 摘要 |
<p>Embodiments relate to a graphene-based memory device, methods of forming the graphene-based memory device, and methods of representing data with the graphene-based memory device. The graphene-based memory device includes a first graphene layer and a second graphene layer. A first insulation layer is located between the first and second graphene layers. The first insulation layer has an opening between the first and second graphene layers, and the first graphene layer is configured to bend into the opening to contact the second graphene layer based on a first electrostatic force.</p> |
