发明名称 COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS
摘要 An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
申请公布号 KR101365784(B1) 申请公布日期 2014.02.20
申请号 KR20077017990 申请日期 2006.01.09
申请人 发明人
分类号 G03F7/30;G03F7/32;G03F7/34 主分类号 G03F7/30
代理机构 代理人
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