| 发明名称 |
APPARATUS AND PROCESS FOR ATOMIC LAYER DEPOSITION |
| 摘要 |
Provided are atomic layer deposition apparatus and methods including a gas cushion plate comprising a plurality of openings configured to create a gas cushion adjacent the gas cushion plate so that a substrate can be moved through a processing chamber. |
| 申请公布号 |
KR20140021579(A) |
申请公布日期 |
2014.02.20 |
| 申请号 |
KR20137025399 |
申请日期 |
2012.02.29 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YUDOVSKY JOSEPH |
| 分类号 |
C23C16/44;C23C16/455;H01L21/205 |
主分类号 |
C23C16/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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