| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique contributing to the stable production of a monocrystalline silicon by selecting, in high proportionality and reproducibility, a polycrystalline silicon suitable as a raw ingredient for manufacturing the monocrystalline silicon.SOLUTION: The method of the present invention for selecting a polycrystalline silicon bar features the selection, as a raw material for manufacturing a monocrystalline silicon, of a polycrystalline silicon bar simultaneously satisfying stipulations that, in a case where an electron backscattering diffraction image obtained by irradiating electron beams onto the principal plane of a sheet-shaped sample collected from the polycrystalline silicon bar is analyzed, the total sum area of regions where no crystal grains having grain diameters of 0.5 μm or larger are detected to be 10% or less of the entire area irradiated with electron beams (condition 1) and that the number ratio of crystal grains having grain diameters confined to a range of 0.5 μm or above and below 3 μm be 45% or more of the entirety of detected crystal grains (condition 2). No disappearances of crystal borders arise if a monocrystalline silicon is grown by using the polycrystalline silicon bar in question. As a result, it becomes possible to stably manufacture the monocrystalline silicon. |
