发明名称 |
SELF-ALIGNED THIN FILM TRANSISTOR WITH DOPING BARRIER AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>The present invention relates to a self-aligned thin film transistor with a doping barrier for controlling the diffusion level of a doping barrier using the doping barrier in a thin film transistor having a self-alignment structure and a manufacturing method thereof. A self-aligned thin film transistor with a doping barrier includes an active layer formed on a substrate and having a first doping region, a second doping region and a channel region, a gate insulating layer formed on the channel region, a gate electrode formed on the gate insulating layer, a doping source layer formed on the first and the second doping region, a doping barrier formed between the doping source and the first and the second doping region.</p> |
申请公布号 |
KR20140021096(A) |
申请公布日期 |
2014.02.20 |
申请号 |
KR20120086234 |
申请日期 |
2012.08.07 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
HWANG, CHI SUN;PARK, SANG HEE;OH, HIM CHAN |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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