FILM FORMATION DEVICE AND FILM FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technology of inhibiting irregularities from occurring in a film formed on a surface of a wafer.SOLUTION: A film formation device 10 includes: a chamber 15; a susceptor 16 which is installed in the chamber 15 and includes a placement part 17a on which a silicon wafer 50 is placed; a heater 22 which heats the silicon wafer 50 placed on the placement part 17a; and a raw material gas supply device 25 for introducing a raw material mixed gas, which generates a silicon solid body in response to heating, into the chamber. A solid film 100 is formed on a surface of the placement part 17a by the silicon solid body. Surface roughness of a surface of the solid film 100 is larger than surface roughness of the surface of the placement part 17a which is observed before the solid film 100 is formed thereon.