SIX-TRANSISTOR STATIC RANDOM ACCESS MEMORY UNIT AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to the technical field of memory design and manufacturing. Provided are a six-transistor static random access memory unit and manufacturing method thereof, the memory unit comprising two phase-inverters and a transmission gate; each phase-inverter consists of a structurally symmetric NMOS transistor and a structurally symmetric PMOS transistor connected to each other; the transmission gate consists of two NMOS transistors having asymmetric source and drain structures; the source structure of the NMOS transistor having asymmetric source and drain structures is provided with a pocket region and a lightly doped drain (LDD) region, and the drain structure is not provided with a pocket region or an LDD region. The present invention employs a transmission gate N-type transistor having an asymmetric structure, and eliminates the asymmetry caused by the LDD region and the pocket region of the drain without changing device processing technique, additionally increasing the layout size, or reducing the service life of a device, thus achieving electrical asymmetry obviously superior to the existing structures. The present invention has a simple process and reduced cost, and is suitable for industrial production.