| 摘要 |
<p>According to one embodiment of the present invention, a thin film transistor includes a substrate; a semiconductor formed on the substrate and having a source region, a first drain region separated from the source region with a first current path and a second drain region separated from the source region with a second current path different from the first current path; a gate electrode insulated from the semiconductor by the gate insulating layer; a source electrode connected to the source region of the semiconductor; a first drain electrode connected to the first drain region of the semiconductor; a second drain electrode connected to the second drain region of the semiconductor; and a bypass line electrically connected to the first drain and the second drain region.</p> |
