| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nonvolatile programmable switch having excellent erasing characteristics.SOLUTION: A semiconductor integrated circuit includes a nonvolatile memory including first and second nonvolatile memory transistors M11, M12, and an output wiring Q with which their drain diffusion regions are connected commonly. The lower surface of the gate electrode of a logic transistor in a logic switch circuit 30 has a height, from the upper surface of a surface, which is lower than that of the lower surface of the control gate electrode of the first and second nonvolatile memory transistors M11, M12. When viewed from the upper surface of the substrate, the length of the overlapping portion of the source diffusion region and the control gate electrode of the first and second nonvolatile memory transistors M11, M12 in a direction parallel with the channel is larger than the length of the overlapping portion of the source diffusion region and the gate electrode of the logic transistor in a direction parallel with the channel. |
