| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method of a wafer having a plurality of peeling regions capable of preventing the processing quality of the regions from deteriorating due to irradiation with a laser beam.SOLUTION: The processing method includes a modified layer for inspection forming step, an inspection step, a modified layer forming step, and a division step. In the modified layer for inspection forming step, a modified layer K is formed on one of a plurality of wafers W. In the inspection step, mapping data of peeling region R is acquired by detecting the peeling region R of one wafer WA from where the surface film is peeled. In the modified layer forming step, laser beam is stopped in the peeling region R on the basis of the mapping data, or the like, and the back side of another wafer out of the plurality of wafers W is irradiated with a laser beam in a region other than the peeling region R. In the modified layer forming step, a modified layer K is formed along dividing lines S at least inside the other wafer in a region other than the peeling region R. In the division step, another wafer is divided into individual chips. |
