MAGNETORESISTANCE EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To reduce a writing current while suppressing degradation of data retention characteristics.SOLUTION: A magnetoresistance effect element comprises: a storage layer 31 which has magnetic anisotropy perpendicular to a film surface, and whose magnetization direction is variable; a reference layer 33 which has magnetic anisotropy perpendicular to the film surface, and whose magnetization direction is invariable; and a tunnel barrier layer 32 formed between the storage layer and the reference layer. The storage layer is made of CoFeB (0.4≤x<0.6) and has a film thickness of 0.7 nm or greater and less than 1.0 nm.