SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain low on-resistance and high withstand voltage.SOLUTION: A drift region 70 has a first conductivity type and has a first silicon carbide layer 51. The first silicon carbide layer 51 has a polytype of 4H or 6H. A second silicon carbide layer 62 is provided on the drift layer 70, has a second conductivity type, and has the polytype of 3C. A third silicon carbide layer 63 is provided on the second silicon carbide layer 62 and has the first conductivity type. A gate insulating film 71 is provided on the second silicon carbide layer 62 so as to connect the third silicon carbide layer 63 and the drift region 70.