发明名称 |
SWITCHING DEVICE WITH NON-NEGATIVE BIASING |
摘要 |
Embodiments provide a switching device including one or more field-effect transistors (FETs) and bias circuitry. The one or more FETs may transition between an off state and an on state to facilitate switching of a transmission signal. The one or more FETs may include a drain terminal, a source terminal, a gate terminal, and a body. The biasing circuitry may bias the drain terminal and the source terminal to a first DC voltage in the on state and a second DC voltage in the off state. The first and second DC voltages may be non-negative. The biasing circuitry may be further configured to bias the gate terminal to the first DC voltage in the off state and the second DC voltage in the on state. |
申请公布号 |
US2014049311(A1) |
申请公布日期 |
2014.02.20 |
申请号 |
US201213587590 |
申请日期 |
2012.08.16 |
申请人 |
YANG XIAOMIN;FURINO, JR. JAMES P.;TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
YANG XIAOMIN;FURINO, JR. JAMES P. |
分类号 |
H03K17/06;H03K17/687 |
主分类号 |
H03K17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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