发明名称 SWITCHING DEVICE WITH NON-NEGATIVE BIASING
摘要 Embodiments provide a switching device including one or more field-effect transistors (FETs) and bias circuitry. The one or more FETs may transition between an off state and an on state to facilitate switching of a transmission signal. The one or more FETs may include a drain terminal, a source terminal, a gate terminal, and a body. The biasing circuitry may bias the drain terminal and the source terminal to a first DC voltage in the on state and a second DC voltage in the off state. The first and second DC voltages may be non-negative. The biasing circuitry may be further configured to bias the gate terminal to the first DC voltage in the off state and the second DC voltage in the on state.
申请公布号 US2014049311(A1) 申请公布日期 2014.02.20
申请号 US201213587590 申请日期 2012.08.16
申请人 YANG XIAOMIN;FURINO, JR. JAMES P.;TRIQUINT SEMICONDUCTOR, INC. 发明人 YANG XIAOMIN;FURINO, JR. JAMES P.
分类号 H03K17/06;H03K17/687 主分类号 H03K17/06
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