| 摘要 |
<p>A semiconductor device is provided, and comprises a substrate (1), a gate stack structure (2) on the substrate (1), source/drain regions (4) in the substrate (1) on two sides of the gate stack structure (2), and a channel region between the source/drain regions (4) in the substrate, at least one of the source/drain regions (4) comprising a GeSn alloy. By using the semiconductor device and a manufacturing method thereof, a precursor is injected and then rapid annealing is performed through laser, to form a GeSn stress source/drain region (4) highly containing Sn, thereby effectively enhancing the device carrier mobility in the channel region and further improving the device drive capability.</p> |
