| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of suppressing change of a titanium nitride film that exposes on the side surface of an opening to a titanium oxide film even when moisture from the outside of a semiconductor device enters the opening on a pad, and improving the reliability of the semiconductor device, and provide a technology capable of suppressing occurrence of a crack on a passivation film of the pad and improving the reliability of the semiconductor device.SOLUTION: The diameter of an opening OP2 is made smaller than the diameter of an opening OP1, and the opening OP2 is formed so as to be included in the opening OP1. Therefore, the side surface of an antireflection film AR that exposes on the side surface of the opening OP1 can be covered with a passivation film PAS2 that forms the opening OP2. As a result, a pad PD can be formed without exposing the side surface of the antireflection film AR. |
