发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device has a connection structure in which a power semiconductor chip is mounted on an insulating substrate having conductor patterns bonded to front and rear surfaces thereof, and the insulating substrate is connected to a heat-dissipating base member to dissipate heat generated from the power semiconductor chip to outside. The conductor pattern on the rear surface bonded to the heat-dissipating base member has a bonding portion having a rectangular shape and a predetermined curvature radius in vicinity of corners.
申请公布号 US2014048918(A1) 申请公布日期 2014.02.20
申请号 US201214110841 申请日期 2012.05.11
申请人 NAGAUNE FUMIO;FUJI ELECTRIC CO., LTD 发明人 NAGAUNE FUMIO
分类号 H01L23/495;H01L23/00 主分类号 H01L23/495
代理机构 代理人
主权项
地址
您可能感兴趣的专利