发明名称 Trench Connection Between a Transistor and a Further Component
摘要 A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component.
申请公布号 US2014048871(A1) 申请公布日期 2014.02.20
申请号 US201313933047 申请日期 2013.07.01
申请人 INFINEON TECHNOLOGIES AG 发明人 ZUNDEL MARKUS;HIRLER FRANZ;KRISCHKE NORBERT
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
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