发明名称 CMOS-COMPATIBLE GOLD-FREE CONTACTS
摘要 A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured.
申请公布号 US2014050243(A1) 申请公布日期 2014.02.20
申请号 US201113995689 申请日期 2011.12.22
申请人 JAIN SIDDHARTH;BOWERS JOHN;SYSAK MATTHEW;HECK JOHN;FELDESH RAN;JONES RICHARD;SHETRIT YOEL;GEVA MICHAEL 发明人 JAIN SIDDHARTH;BOWERS JOHN;SYSAK MATTHEW;HECK JOHN;FELDESH RAN;JONES RICHARD;SHETRIT YOEL;GEVA MICHAEL
分类号 H01L23/00 主分类号 H01L23/00
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