发明名称 Semiconductor Device, Integrated Circuit and Manufacturing Method Thereof
摘要 One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench.
申请公布号 US2014048904(A1) 申请公布日期 2014.02.20
申请号 US201213589717 申请日期 2012.08.20
申请人 ZUNDEL MARKUS;MEISER ANDREAS;LANG HANS-PETER;MEYER THORSTEN;IRSIGLER PETER;INFINEON TECHNOLOGIES AG 发明人 ZUNDEL MARKUS;MEISER ANDREAS;LANG HANS-PETER;MEYER THORSTEN;IRSIGLER PETER
分类号 H01L29/06;H01L21/02;H01L21/762;H01L23/48;H01L29/66 主分类号 H01L29/06
代理机构 代理人
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