发明名称 |
Semiconductor Device, Integrated Circuit and Manufacturing Method Thereof |
摘要 |
One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench. |
申请公布号 |
US2014048904(A1) |
申请公布日期 |
2014.02.20 |
申请号 |
US201213589717 |
申请日期 |
2012.08.20 |
申请人 |
ZUNDEL MARKUS;MEISER ANDREAS;LANG HANS-PETER;MEYER THORSTEN;IRSIGLER PETER;INFINEON TECHNOLOGIES AG |
发明人 |
ZUNDEL MARKUS;MEISER ANDREAS;LANG HANS-PETER;MEYER THORSTEN;IRSIGLER PETER |
分类号 |
H01L29/06;H01L21/02;H01L21/762;H01L23/48;H01L29/66 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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