INTEGRATED SEMICONDUCTOR DEVICE

摘要

An integrated semiconductor device having a stabilization function comprises a substrate layer(126), an insulating layer (133), ground plane layer (128) formed between said substrate layer (126) and said insulating layer (133)and a signal plane layer (131) formed on a surface (137) of said insulating layer (133)facing away from said substrate layer (126). An n-port (121), e.g. a transistor (121),is formed within said substrate layer (126) on a first side (127) of said substrate layer (126). A via hole (136) is formed through said insulating layer (133). A resistor (125) is formed within said ground plane layer (128).