PHOTOACTIVATED COMPOSITION FOR ETCHING SILICON NITRIDE FILMS

摘要

FIELD: chemistry.SUBSTANCE: invention relates to production of integrated microcircuits and other electronic devices which use a plenary manufacturing technique based on photolithographic processes. The photoactivated composition contains a polymer base and a photosensitive component. The polymer base is polymethyl methacrylate and the photosensitive component is ammonium fluoride. The composition further contains a protophilic reagent - ?-naphthylamine and solvents - acetone and trifluoroacetic acid. Components are in the following ratio, wt %: polymethyl methacrylate - 11.8; ammonium fluoride - 4.7-7.1; ?-naphthylamine - 18.3; acetone - 8.3-10.7; trifluoroacetic acid - 54.5. Use of the composition simplifies the technological process of obtaining photoetched pattern in a silicon layer, while excluding development, baking and wet chemical etching steps.EFFECT: simple technological process when using the disclosed composition also considerably reduces defects in the obtained articles.3 ex