SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the performance of a MOS transistor, in a semiconductor device and its manufacturing method.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: ion-injecting a first impurity into a first region Ion a semiconductor substrate 1; forming a semiconductor layer 28 on the semiconductor substrate 1; forming an element isolation insulating film 34 in grooves formed in the semiconductor layer 28 and the semiconductor substrate 1; ion-injecting a second impurity into a second region IIof the semiconductor layer 28; forming a first gate insulating film 40 and a first gate electrode 42a in the first region I; forming a second gate insulating film 36 and a second gate electrode 42b in the second region II; forming a first source region 62 and a first drain region 64 at both sides of the first gate electrode 42a; and forming a second source region 70 and a second drain region 72 at both sides of the second gate electrode 42b.