| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for operating a NAND flash device.SOLUTION: The method for selectively giving an erasure voltage to the NAND flash device having a first well sector, a second well sector and at least one memory block respectively formed in the first well sector and the second well sector includes: a step of selecting one of the two memory blocks to erase a NAND cell string in response to a block address; a step of selecting the first well sector in response to at least a part of the block address; and a step of applying the erasure voltage to the first well sector. |
