发明名称 |
LIGHT EMITTING DEVICE WITH IMPROVED EXTRACTION EFFICIENCY |
摘要 |
In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate-alayer|)/asubstrate]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured. |
申请公布号 |
US2014048817(A1) |
申请公布日期 |
2014.02.20 |
申请号 |
US201113882511 |
申请日期 |
2011.11.01 |
申请人 |
GARDNER NATHAN FREDERICK;GOETZ WERNER KARL;GRUNDMANN MICHAIL JASON;MCLAURIN MELVIN BARKER;ELPER JOHN EDWARD;CAMRAS MICHAEL DAVID;DAVIE AURELIEN JEAN FRANCOIS;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
GARDNER NATHAN FREDERICK;GOETZ WERNER KARL;GRUNDMANN MICHAIL JASON;MCLAURIN MELVIN BARKER;ELPER JOHN EDWARD;CAMRAS MICHAEL DAVID;DAVIE AURELIEN JEAN FRANCOIS |
分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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