发明名称 METHOD FOR MANUFACTURING TARGET FOR X-RAY EMISSION, AND TARGET FOR X-RAY EMISSION
摘要 In a method for manufacturing a target for X-ray emission, a bottomed hole is formed in a substrate (S102). In the method for manufacturing a target for X-ray emission, subsequently, the position where an ion beam is irradiated is aligned with the diametric center of the hole (S103). In the method for manufacturing a target for X-ray emission, subsequently, the irradiation position of the ion beam is fixed, and the ion beam is intermittently irradiated while a stream of a material gas for the target for X-ray emission is directed at the location where the ion beam is irradiated (S104). A period of time over which ion irradiation is turned off is provided, whereby the material gas flows to the bottom of the hole; therefore, metal can be deposited from the bottom of the hole, enabling voids to be prevented from forming in the bottom of the hole.
申请公布号 WO2014027624(A1) 申请公布日期 2014.02.20
申请号 WO2013JP71688 申请日期 2013.08.09
申请人 TOKYO ELECTRON LIMITED 发明人 KADOSAWA, KATSUJI
分类号 H01J9/14;H01J35/08 主分类号 H01J9/14
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