SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE FOR SEMICONDUCTOR DEVICE FORMATION

摘要

PROBLEM TO BE SOLVED: To provide an easily manufacturable semiconductor device having high breakdown voltage at a termination part, a method for manufacturing the same, and a substrate for semiconductor device formation.SOLUTION: A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: anodically bonding a glass plate to a silicon wafer; forming a plurality of openings in the glass plate; epitaxially growing a silicon layer on the silicon wafer inside the openings; forming an element on the silicon layer; and dicing a substrate into individual pieces per silicon layer by cutting the silicon wafer and the glass plate along a dicing line which does not pass the silicon layer.