| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC epitaxial wafer in which the linear density of step bunching connected with a shallow pit resulting from spiral dislocation in an SiC epitaxial layer is less than 5 mm.SOLUTION: The SiC epitaxial wafer includes an epitaxial layer of SiC formed on a 4H-SiC single crystal substrate inclining at an off angle of 0.4°-5°, and the linear density of step bunching connected with a shallow pit resulting from spiral dislocation in an SiC epitaxial layer is less than 5 mm. |
