| 摘要 |
A semiconductor light emitting device includes a substrate, a first semiconductor light emitting element and a second semiconductor light emitting element. A first semiconductor light emitting element is provided on the substrate and includes a first layer having a first conductivity type, a first light emitting layer, and a second layer having a second conductivity type. A second semiconductor light emitting element is provided on the substrate and includes a third layer having a second conductivity type, a second light emitting layer, and a fourth layer having a first conductivity type. The first layer and the third layer are electrically connected. A peak emission wavelength of light emitted from the first light emitting layer and a peak emission wavelength of light emitted from the second light emitting layer are substantially same. |
