发明名称 DIAMOND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 [Problem] To provide a diamond semiconductor device that has a greater degree of freedom in the device design and is able to be manufactured efficiently, and a method for manufacturing the diamond semiconductor device. [Solution] This diamond semiconductor device has a diamond substrate, a diamond step section that is disposed so as to rise in a substantially vertical manner on a substrate surface having a {001} crystal plane on the diamond substrate, a n-type phosphorus-doped diamond region, and a diamond insulating region. The diamond step section is integrally formed by a first step section having a side surface with a {110} crystal plane and a second step section having a side surface with a {100} crystal plane. The phosphorus-doped diamond region is formed by crystal growth with the side surface of the first step section and the substrate surface of the diamond substrate acting as growth substrates originating from a base angle of the step shape of the first step section. The diamond insulating region is formed by crystal growth with the side surface of the second step section and the substrate surface of the diamond substrate acting as growth substrates.
申请公布号 WO2014027600(A1) 申请公布日期 2014.02.20
申请号 WO2013JP71471 申请日期 2013.08.08
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY 发明人 KATO HIROMITSU;MAKINO TOSHIHARU;OGURA MASAHIKO;TAKEUCHI DAISUKE;YAMASAKI SATOSHI;HATANO MUTSUKO;IWASAKI TAKAYUKI
分类号 H01L21/337;H01L21/336;H01L21/338;H01L27/098;H01L29/12;H01L29/78;H01L29/808;H01L29/812 主分类号 H01L21/337
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