| 摘要 |
The present invention relates to a device for controlling the thickness of a thin film while the structure of an existing device for growing thin films is used. The exposure time of a substrate to a gas including a crystalline material is controlled by using a sample tray with a cover. Therefore, the micro control of the thickness of the thin film such as a thin layer, a quantum well structure, etc and the growth of nanobars, nanolines, and nanoneedles are carried out. |
