发明名称 |
LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS |
摘要 |
<p>Deposition of silicon oxide films at low temperature by using wet chemistry techniques. The wet chemistry solution may be a mixture of sodium hypochloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate, such as silicic acid. The resulting silicon oxide films provide excellent anti-reflective coatings for solar cells and the like.</p> |
申请公布号 |
EP2697826(A1) |
申请公布日期 |
2014.02.19 |
申请号 |
EP20120770650 |
申请日期 |
2012.03.29 |
申请人 |
ASIA UNION ELECTRONIC CHEMICAL CORPORATION |
发明人 |
DOVE, CURTIS;SINGH, BALJIT;TESNADO, EDUARD, GIL PARAN;BALOOCH, MEHDI |
分类号 |
H01L31/18;H01L21/316;H01L31/0216 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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