METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING A SINGLE FLOATING ISLAND AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY

摘要

The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device having a single FLI structure. The method for manufacturing the semiconductor device comprises a step for forming a first N-type epi-layer on an N-type substrate; a step for injecting P-type impurities to a part of the first N-type epi-layer and forming a floating P-type area; a step for forming a second N-type epi-layer on the first N-type epi-layer; a step for injecting the P-type impurities to both sides of the second N-type epi-layer and forming a P-base area; a step for injecting N-type impurities to a part of the P-base area and forming an N+ area; a step for forming a gate electrode on an N-type drift area; a step for forming a source electrode on the N-type drift area to touch the P-base and the N+ area; and a step for forming a drain electrode on a lower part of the N-type substrate. The first N-type epi-layer and the second N-type epi-layer form the N-type drift area. The concentration of the N-type impurities included in an N-type drift layer are determined based on breakdown voltage corresponding to a specific semiconductor device which does not have the floating P-type area and comprises Nd concentration of the N-type drift layer. [Reference numerals] (AA) Start; (BB) End; (S110) Form a first N-type epi-layer on an N-type substrate; (S120) Form a floating P-type area by injecting P-type impurities to a part of the first N-type epi-layer; (S130) Form the second N-type epi-layer on the first N-type epi-layer; (S140) Form a gate electrode on an N-type drift area; (S150) Form a P-base area by injecting the P-type impurities to both upper sides of the second N-type epi-layer; (S160) Form an N+ area by injecting N-type impurities to a part of the P-base area.; (S170) Form a source electrode to touch the P-base area to the N+ area on the N-type drift area; (S180) Form a drain electrode on a lower part of the N-type substrate