MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

摘要

The present invention provides a monomer represented by a chemical formula (1). (R1 and R2 represent an alkyl group. R3, R4 and R5 represent a hydrogen and a methyl group or an ethyl group, wherein the R3, R4 and R5 represent do not represent a hydrogen at the same time. R6 represent a hydrogen or a methyl group. X1 represents an alkylene group or an arylene group. X2 represents a methylene group or an ethylene group. And k1 is 0 or 1.) The resist composition including the polymer originated form the monomer is able to obtain high dissolution contrast by increasing the solubility of a development solution by a branched alkyl group in the negative pattern formation of organic solvent phenomenon. The resist composition prevents the generation of bridge defects or the collapse of a pattern since the generation of swelling among the organic solvent development solution is not generated. [Reference numerals] (A) Spraying a photoresist; (B) Exposing the photoresist; (C) Organic solvent development