| 摘要 |
According to one embodiment, a semiconductor light emitting device (110, 111, 112, 113, 114, 120, 121, 122, 123) includes: a first semiconductor layer (10); a second semiconductor layer (20); and a light emitting layer (30) provided between the first (10) and the second semiconductor layers (20). The first semiconductor layer (10) includes a nitride semiconductor, and is of an n-type. The second semiconductor layer (20) includes a nitride semiconductor, and is of a p-type. The light emitting layer (30) includes: a first well layer (WL1); a second well layer (WL2) provided between the first well layer (WL1) and the second semiconductor layer (20); a first barrier layer (BL1) provided between the first (WL1) and the second well layers (WL2); and a first Al containing layer (AL1) contacting the second well layer (WL2) between the first barrier layer (BL1) and the second well layer (WL2) and containing layer containing Al x1 Ga 1-x1 N(0.1 ‰¤ x1 ‰¤ 0.35). |
