METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

A heating plate (32) having a smooth surface is placed on a hot plate (31) which constitutes a heating section, and the smooth surface of the heating plate (32) is closely adhered on the rear surface of a single-crystal Si substrate (10) bonded to a transparent insulating substrate (20). The temperature of the heating plate (32) is kept at 200°C or higher but not higher than 350°C. When the rear surface of the single-crystal Si substrate (10) bonded to the insulating substrate (20) is closely adhered on the heating plate (32), the single-crystal Si substrate (10) is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate (20). A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate (10), thus separation takes place at a hydrogen ion-implanted interface.