SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention includes a semiconductor memory device including a semiconductor substrate on which a device isolation region and an active region are defined; gate lines formed on the semiconductor substrate in a direction to cross the device isolation region; and a capping film in the device isolation region between the gate lines to define an air gap which is positioned to be higher than the surface of the semiconductor substrate and a manufacturing method for the same. [Reference numerals] (AA) Air gap