HALF-TONE PHASE SHIFT BLANKMASK, PHOTOMASK AND METHOD FOR FABRICATING OF THE SAME

摘要

The present invention realizes the formation of a thin film of a resist film, capable of having required optical properties and chemical resistance and enabling formation of a thin film of a phase inversion film and a light shielding film by forming the phase inversion film using MoSi compounds or MoTaSi compounds and forming the light shielding film using a compound containing tin (Sn). Accordingly, the present invention provides a phase inversion blank mask and a photomask applied to ArF lithography of 193 nm, dipping exposure lithography and double patterning lithography by having high resolution to obtain excellent pattern accuracy and having a minimal line width of 45 nm or less specifically, 32 nm or less.