| 摘要 |
<p>This gate drive circuit which drives an IGBT (2) as a power semiconductor element is provided with: a constant current gate drive circuit (1), which charges a gate capacitor of the IGBT (2) with a constant current; and a constant voltage gate drive circuit (5), which is connected in parallel to between input and output terminals of the constant current gate drive circuit (1) via a series circuit of an MOSFET (4) and a resistor (5-1), and charges the gate capacitor of the IGBT (2) with a constant voltage. At the time of driving the IGBT (2), the gate capacitor of the IGBT (2) is charged using both the constant current gate drive circuit (1) and the constant voltage gate drive circuit (5).</p> |
