发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, CRYSTAL PRODUCTION DEVICE, AND GROUP 13 NITRIDE SEMICONDUCTOR CRYSTAL |
摘要 |
A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film. |
申请公布号 |
KR20140020855(A) |
申请公布日期 |
2014.02.19 |
申请号 |
KR20137019654 |
申请日期 |
2011.12.26 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
FUJISAWA HIDEO;MIKAWA YUTAKA |
分类号 |
C30B7/10;C30B29/38 |
主分类号 |
C30B7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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