发明名称 METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, CRYSTAL PRODUCTION DEVICE, AND GROUP 13 NITRIDE SEMICONDUCTOR CRYSTAL
摘要 A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.
申请公布号 KR20140020855(A) 申请公布日期 2014.02.19
申请号 KR20137019654 申请日期 2011.12.26
申请人 MITSUBISHI CHEMICAL CORPORATION 发明人 FUJISAWA HIDEO;MIKAWA YUTAKA
分类号 C30B7/10;C30B29/38 主分类号 C30B7/10
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