METHOD FOR CONTROLLING A READ VOLTAGE OF MEMORY DEVICE AND DATA READ OPERATING METHOD USING METHOD THEREOF

摘要

A method for controlling a read voltage of a memory device, a data reading method using the same, and a memory system are disclosed. The method for controlling the read voltage of the memory device comprises the steps of: detecting a read voltage level of the memory device where a minimum error bit is generated in a data read operational process for a storage area of a first category in which a first error correction rate is applied; and determining the read voltage for the storage area of a second category in which a second error correction rate is applied based on the detected read voltage level. The first error correction rate is set with the higher correction rate than the second error correction rate. [Reference numerals] (AA) Start; (BB) End; (S110) Detecting a read voltage level of the memory device where a minimum error bit is generated in a data read operational process for a storage area of a first category in which a first error correction rate is applied; (S120) Determining the read voltage for the storage area of a second category in which a second error correction rate is applied based on the detected read voltage level